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Physical Review B
Smakman, E.P.; Helgers, P.L.J.; Verheyen, J.; Koenraad, P.M.; Möller, R. The dynamic behavior of single bistable Si dopants in the GaAs (110) surface, which switch between a positive and a negative charge configuration, was investigated using a scanning tunneling microscope (STM) and noise analysis electronics. The dopant atom switching frequency shows a clear dependence on the bias voltage and tunneling current, because these parameters influence the escape and capture processes of electrons.doi:10.1103/physrevb.90.041410 fatcat:zvnlkkcnn5e4nmkqci2yw3g2jq