Tunable switching dynamics of a single Si dopant inGaAs(110)

E. P. Smakman, P. L. J. Helgers, J. Verheyen, P. M. Koenraad, R. Möller
2014 Physical Review B  
Smakman, E.P.; Helgers, P.L.J.; Verheyen, J.; Koenraad, P.M.; Möller, R. The dynamic behavior of single bistable Si dopants in the GaAs (110) surface, which switch between a positive and a negative charge configuration, was investigated using a scanning tunneling microscope (STM) and noise analysis electronics. The dopant atom switching frequency shows a clear dependence on the bias voltage and tunneling current, because these parameters influence the escape and capture processes of electrons.
more » ... ur physical model for these processes, taking into account the relevant tunneling barriers, matches well with the experimental data. By choosing the appropriate tunneling conditions, we show that a single dopant can be employed as a memory element. The STM tip serves both as an electrical gate to write and as a probe to read the information stored on a single Si atom.
doi:10.1103/physrevb.90.041410 fatcat:zvnlkkcnn5e4nmkqci2yw3g2jq