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We present the results of investigations of the effect caused by low magnetic field treatment on InP single crystals impurity-defect composition. This effect was found when studying the radiative recombination (luminescence) spectra in the 0.6-2.5 µm range at 77 K. The static magnet with B = 0.44 T was used as a source of magnetic field. We studied samples of two groups: porous InP crystals and epitaxial layers grown on porous substrate. The crystals of both groups were not specially doped. Itdoi:10.15407/spqeo12.01.083 fatcat:njln537n3jeffnnp4ohedisbom