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The dynamical behavior of impurities into the silicon junction transistor has been studied using an empirical methodology to investigate its behavior knowing only the physical parameters of materials together with practical behavior of their passive components. The operating modes suggested with equations governing circuit performance are derived considering transient analysis. The relationship between material properties and equivalent circuit is discussed from a physical viewpoint.doi:10.1155/2018/4237686 fatcat:335vcodci5h3znoiiucfuxh3fu