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Vertically Aligned Carbon Nanotubes (VA-CNTs) were grown by Chemical Vapor Deposition (CVD) on a silicon substrate with alternating layers of TiN and SiO 2 . VA-CNTs were exposed to X-ray radiation to study the change in resistivity later. Preliminary results show an increase in the resistivity of CNTs as a function of radiation exposure time, which means that the structure responds successfully to radiation exposure. The variation of resistivity has been associated with the presence of organicdoi:10.3844/ajeassp.2020.49.55 fatcat:djbnhpgcqzeitmwom3r4wdzw3m