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A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge + ion implantation technique at different substrate temperatures (room temperature, 150°C, 450°C and 600°C) have been studied. The diode I-V characteristics, thermally stimulated capacitance and currents were measured and the presence and parameters of shallow trap levels were determined in dependence on the substratedoi:10.15407/spqeo2.03.074 fatcat:eqlashxm3vejran3bzxnltb47i