X-ray scattering from self-assembled InAs islands

A. Malachias, B. R. A. Neves, W. N. Rodrigues, M. V. B. Moreira, S. Kycia, T. H. Metzger, R. Magalhães-Paniago
2004 Brazilian journal of physics  
In this work several structural and chemical properties of self-assembled InAs islands grown on GaAs(001) are studied using surface x-ray scattering with synchrotron radiation. The technique of x-ray diffraction under grazing incidence condition was employed to differentiate coherent and incoherent islands. We used a model of a strained pyramidal island to interpret the x-ray results and correlate size and strain-state of these islands. The degree of GaAs interdiffusion in the islands was
more » ... e islands was inferred from the variation of volume of the unit cell. The Poisson's ratio of the two materials involved establishes a limit of tetragonal distortion for this material. Any variation in this distortion is associated with the presence of Ga inside the islands.
doi:10.1590/s0103-97332004000400009 fatcat:efnefl5p4jdevfdjc4qpkwek24