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The undercutting process of thermal SiO 2 microcantilevers with different orientations on (100) Si wafer was studied. The silicon substrate was removed by anisotropic chemical etching with a 25 wt. % aqueous solution of TMAH or a 30 wt. % aqueous KOH solution at 80 °C. It was found that 〈110〉 oriented cantilevers were undercutting frontally along the length and 〈100〉 oriented cantilevers experience undercutting along the width of the cantilever, which is a less time consuming process. Thedoi:10.2298/jsc0711127j fatcat:bkacdwu2fvabxmxpuw4n755txe