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Spin-dependent recombination involving oxygen-vacancy complexes in silicon
2014
Physical Review B
Spin-dependent relaxation and recombination processes in γ-irradiated n-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a
doi:10.1103/physrevb.89.195207
fatcat:bu6tsfb7pffybila7r35u535ka