Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics

H. Schone, D.S. Walsh, F.W. Sexton, B.L. Doyle, P.E. Dodd, J.F. Aurand, R.S. Flores, N. Wing
1998 IEEE Transactions on Nuclear Science  
between experimental results and charge collection simulation persist. As an example, the measured total charge col- The entire current transient induced by single 12 MeV Carbon a single ion strike of a isolated FET test structure ions was measured at a SGHz analog bandwidth. A focused does not compare well for particular bias states with 3D ion micro-beam was used to acquire multiple single ion trancharge transport device simulationsl. sients at multiple locations of a single CMOS transistor.
more » ... he Detailed spatially and temporally dependent charge colcurrent transients reveal clear and discernible contributions of lection measurements are needed to experimentally verify drift and diffusive charge collection. Transients measured for transport simulations. to measuTe the true shape of calculations. Estimates are presented for the drift assisted funscopes used in these experiments require 512 conneling charge collection depth. secutive ion hits at one device position to acquire an entire d tl drain and off-drain ion strikes to 3D DAVINC1 charge transienk2,3 do not reproduce model calculations. The
doi:10.1109/23.736496 fatcat:htbm6vyy6vbc5avm6ntnssyqla