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Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics
1998
IEEE Transactions on Nuclear Science
between experimental results and charge collection simulation persist. As an example, the measured total charge col- The entire current transient induced by single 12 MeV Carbon a single ion strike of a isolated FET test structure ions was measured at a SGHz analog bandwidth. A focused does not compare well for particular bias states with 3D ion micro-beam was used to acquire multiple single ion trancharge transport device simulationsl. sients at multiple locations of a single CMOS transistor.
doi:10.1109/23.736496
fatcat:htbm6vyy6vbc5avm6ntnssyqla