p-n junctions obtained in (Ge2)x(GaAs)1–x varizone solid solutions by liquid phase epitaxy

B. Sapaev, Physical and Technical Institute of Uzbek Academy of Sciences, 2b, G. Mavlanov str.,700084 Tashkent, Republic of Uzbekistan E-mail: bayram@physic.uzsci.net
2005 Semiconductor Physics, Quantum Electronics & Optoelectronics  
doi:10.15407/spqeo8.04.033 fatcat:t5qq2eeo3ff6jaujxg5otq4fdm