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We present detailed simulations addressing recent electronic interference experiments, where a metallic gate is used to locally modify the Fermi wave-length of the charge carriers. Our numerical calculations are based on a solution of the one-particle Schroedinger equation for a realistic model of the actual sample geometry, including a Poisson equation based determination of the potential due to the gate. The conductance is determined with the multiprobe Landauer-Buettiker formula, and indoi:10.1103/physrevb.60.8191 fatcat:efiiwz6srvg67g42iwnbfmcqq4