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The pulse height response for He and H ions with energies between 1 and 6 MeV incident upon n-type 4H-SiC epitaxial Schottky diodes has been investigated. The average amount of energy, , given up by the incident radiation to form electron-hole pair in this material was obtained by comparison with the average energy loss per pair in silicon detectors and it was found to be ͑7.78± 0.05͒ eV at room temperature. This value is smaller than that foreseen by Klein's semiempirical linear relationshipdoi:10.1063/1.2135507 fatcat:d3f7xgov3zdf7casbpjca2zdiu