Memristive Crossbar Arrays for Storage and Computing Applications

Huihan Li, Shaocong Wang, Xumeng Zhang, Wei Wang, Rui Yang, Zhong Sun, Wanxiang Feng, Peng Lin, Zhongrui Wang, Linfeng Sun, Yugui Yao
2021 Advanced Intelligent Systems  
Figure 7. Nanocrossbar memory array with CRS structures to avoid the sneak current. a) Top panel: ECM-based CRS device connected serially with a resistor. Bottom panel: ECM-based CRS device without the series resistor. Reproduced with permission. [150] Copyright 2013, Nature Publishing Group. b) I-V curves of the symmetry-connected cells with the structure of Ti/TiO x /Cu/TiO x /Ti. Reproduced with permission. [154] opyright 2016, IOP Publishing. The left top inset shows the schematic of the
more » ... device and the right lower inset shows the endurance performance of the CRS device at 0.5 V. c) A simple scheme of heterodevice CRS device having these two RRAMs and simple illustrations of device states. Reproduced with permission. [158] Copyright 2012, IEEE. d) The device structure of the Pd/Ta 2 O 5Àx /TaO y /Pd memory devices, and the I-V curve of Pd/Ta 2 O 5Àx /3%-TaO y /Pd device showing bipolar resistive switching. The inset shows the same I-V curve on a logarithmic scale. Reproduced with permission. [161]
doi:10.1002/aisy.202100017 fatcat:ue2xlvc2yvhsbitubd4prugxby