Theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors

Wagah F. Mohammed, Munther N. Al-Tikriti, Alhan M. Aldabag
2020 International Journal on Smart Sensing and Intelligent Systems  
this research aims to study and discuss the theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors based on Shockley-Read-Hall assumptions. The variation of carrier life time, recombination and generation rates as a function of the intrinsic layer (I-layer) thickness will be simulated using MATLAB program. The effects of intrinsic layer thickness on electrons and holes concentration, collection efficiency and short circuit current density have been studied and
more » ... ve been studied and analyzed. It has been found that as the thickness increased, the parameters: recombination rate, generation rate, internal electric field, electrons and holes concentration, carriers' life times, and short circuit current density, were subjected to some variations.
doi:10.21307/ijssis-2019-102 fatcat:vprsbz5osvglbl7omvsuf7ifey