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this research aims to study and discuss the theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors based on Shockley-Read-Hall assumptions. The variation of carrier life time, recombination and generation rates as a function of the intrinsic layer (I-layer) thickness will be simulated using MATLAB program. The effects of intrinsic layer thickness on electrons and holes concentration, collection efficiency and short circuit current density have been studied anddoi:10.21307/ijssis-2019-102 fatcat:vprsbz5osvglbl7omvsuf7ifey