Hole effective mass in silicon inversion layers with different substrate orientations and channel directions

L. Donetti, F. Gámiz, S. Thomas, T. E. Whall, D. R. Leadley, P.-E. Hellström, G. Malm, M. Östling
2011 Journal of Applied Physics  
doi:10.1063/1.3639281 fatcat:zn22gts7kvc5ppoqpszskjkpay