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The purpose of this study is to understand the change of the SiPM structure after irradiation. We compared the profile of the electric field in the SiPM (KETEK) active region for ten not-irradiated and irradiated detectors. The standard method of measurement of C-V characteristics was applied using two configurations (serial and parallel circuit) to exclude the influence of the serial resistance. Dependencies of capacitance on the frequency were studied in the range from 10 to 1000 KHz. Fordoi:10.1051/epjconf/201920407008 fatcat:uyolx2e5uvb7th5o4wrvzbloba