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Physical Review B
A framework for predicting bulk NMR quantities in semi-insulating GaAs under optical alignment conditions is developed by combining literature penetration depth data with simple kinetic equations. The model accounts for the major photoconductivity and NMR intensity variations with photon energy, including the peak near 1.5 eV. With the fitting parameters fixed, the photon-flux dependence of the NMR intensity is predicted quantitatively up to an energy shift. At the highest fluxes, we see thedoi:10.1103/physrevb.76.174440 fatcat:cdor7vcd2bdfdk7zkha7vhupja