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Experimental demonstration of resonant spin-orbit interaction effect
2010
Physics Procedia
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We investigated the spin lifetime in gate-fitted InGaAs narrow wires by magnetotransport measurement. By applying positive gate bias voltage, the spin lifetime in narrow wires became more than one order longer than those obtained from a Hall bar sample with two-dimensional electron gas. By comparison with a theoretical model of the quasi one-dimensional transport, it is found that this enhancement of spin lifetime in gated wires is due to dimensional confinement and resonant spin-orbit
doi:10.1016/j.phpro.2010.01.173
fatcat:hwmojlonejeo7hbyee6hft5gzy