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Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage(Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was proposed to optimize its temperature coefficient(Tco). The results suggested that the Tco of low temperature programmed high temperature read is larger than high temperature programmed low temperature read and this difference is about 2-3mv/℃, whichdoi:10.1109/jeds.2020.3035648 fatcat:7v3rqsogzjdqxlhue4pv5pbugi