Trimethyl(phenyl)silane — a Precursor for Gas Phase Processes of SiCx : H Film Deposition: Synthesis and Characterization

E. N. Ermakova, S. V. Sysoev, L. D. Nikulina, I. P. Tsyrendorzhieva, V. I. Rakhlin, M. L. Kosinova, F. A. Kuznetsov
2015 Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering  
The technique of synthesis and purification of trimethyl(phenyl)silane PhSiMe 3 , allowing to obtain the product with high yield. Individuality of the product was confirmed by elemental analysis for C, H, Si. IR, UV and 1H NMR-spectroscopic studies, defined its spectral characteristics. Complex thermal analysis and thermogravimetric defined thermoanalytical behavior effects of PhSiMe 3 in an inert atmosphere. Tensimetric studies have shown that the compound has sufficient volatility and thermal
more » ... atility and thermal stability for use as a precursor in the process of chemical vapor deposition (CVD). The composition and temperature limits of the possible crystalline phase complexes in equilibrium with the gas phase of different composition has been determed by method of thermodynamic modeling. Calculated CVD diagrams allow us to select the optimum conditions of film deposition. The possibility of using trimethyl(phenyl)silane in CVD processes for producing dielectric films of hydrogenated silicon carbide has been demonstrated.
doi:10.17073/1609-3577-2014-3-199-205 fatcat:rxtxwvavdrfhhc4xxzsn32wzii