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The analysis of random variation in the performance of Floating Gate Metal Oxide Semiconductor Field Effect Transistor (FGMOSFET) which is an often cited semiconductor based electronic device, operated in the subthreshold region defined in terms of its drain current (ID), has been proposed in this research.IDis of interest because it is directly measurable and can be the basis for determining the others. All related manufacturing process induced device level random variations, their statisticaldoi:10.1155/2016/3741250 fatcat:mkgqktvesjgulnsxuebdbdp4aq