The Stabilizing Effects of PMMA Passivation on SolutionProcessed Indium-Zinc Oxide Thin-Film Transistors
용액 공정 기반의 인듐 아연 산화물 트랜지스터의 PMMA 보호막 여부에 따른 신뢰성 평가

Sung-Jin Kim, Kwan-Jun Heo, Ju-Song Eom, Hyeonah Jo, Seong Gon Choi, Byung Jun Jung
2016 Korean Journal of Metals and Materials  
We investigated poly(methyl methacrylate) (PMMA) passivation of solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs). PMMA provides solution-processability and good barrier characteristics against environmental elements such as water and oxygen. The PMMA passivation layers protect the IZO active layer of the TFTs without deteriorating their performance during gate bias stress measurements under ambient conditions, and improve their electrical properties by decreasing leakage
more » ... decreasing leakage current. Moreover, the potential to safely manipulate IZO-TFTs after PMMA passivation was proven by realizing a simple n-channel resistive-load inverter. † (
doi:10.3365/kjmm.2016.54.4.270 fatcat:tb4zwdjhxvepngq3tj44ugcesi