Erratum to: The influences of filament temperature on the structure of boron nitride films and its tribological characterization for microforming die application

Yong Jin, Shigeo Yasuhara, Tetsuhide Shimizu, Ming Yang
2015 Manufacturing Review  
We realized that due to an unfortunate mistake Figure 2 was wrong in page 3 of the paper. Following the "Erratum", we publish the article with the correct version of Figure 2 . We apologize for the inconvenience that this mistake may have caused. Manufacturing Rev. 2015, 2, 4, Abstract -Boron nitride film was deposited on h1 0 0i-oriented silicon substrate by hot filament assisted chemical vapor deposition. The B[N(CH 3 ) 2 ] 3 (Tris(dimetylamino)borane, TDMAB) was used as the single source
more » ... e single source precursor both for boron and nitride, and ammonia gas was used as the extra source to increase the N concentration in the films. Elemental composition of the films deposited under different filament temperatures were measured by energy dispersive X-ray (EDX) analysis, and the structure of the films were measured by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR). The boron nitride films deposited under lower filament temperature was amorphous, while BN films contain hexagonal structure were deposited at higher filament temperature. To verify whether the films can be applied for microforming die, ball on disk test was carried out using pure titanium ball as the counterpart to investigate the interfacial behavior between the films and pure titanium. The results show that the reaction between the films and pure titanium was low as there was no titanium adhesion on the wear track when the film was remained.
doi:10.1051/mfreview/2015016 fatcat:oufpnreyzjcidnobkbulq2ydz4