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We realized that due to an unfortunate mistake Figure 2 was wrong in page 3 of the paper. Following the "Erratum", we publish the article with the correct version of Figure 2 . We apologize for the inconvenience that this mistake may have caused. Manufacturing Rev. 2015, 2, 4, Abstract -Boron nitride film was deposited on h1 0 0i-oriented silicon substrate by hot filament assisted chemical vapor deposition. The B[N(CH 3 ) 2 ] 3 (Tris(dimetylamino)borane, TDMAB) was used as the single sourcedoi:10.1051/mfreview/2015016 fatcat:oufpnreyzjcidnobkbulq2ydz4