High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Jike Lyu, Tingfeng Song, Ignasi Fina, Florencio Sanchez
2020 Nanoscale  
Ferroelectric HfO2 is a promising material for new memory devices, but significant improvement of important properties is necessary to reach applications. However, precedent literature shows that a dilemma between polarization,...
doi:10.1039/d0nr02204g pmid:32420576 fatcat:7dr7o2xfdjhojidkj7vsrro7vq