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Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
2008
Applied Physics Letters
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We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the
doi:10.1063/1.2960356
fatcat:5qhzbrsalfedhni5pnmny5qvua