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Designs protracted to combinational and sequential circuits by using hybrid MOS transistor with memristor
2021
International Journal of Advanced Technology and Engineering Exploration
A resistive device with a memory characteristic feature entitled memristor is explored to overcome the limitations of the Complementary Metal Oxide Semiconductor (CMOS) technology scaling. The memristor is utilized in place of the Metal Oxide Semiconductor (MOS) transistor due to its non-volatile character and nano-scale element. Thus, researchers worked on a combination of memristor and MOS transistor affords with reduced area exploitation, reduced power dissipation, reliability, and large
doi:10.19101/ijatee.2021.874470
fatcat:j7ax4okotzc63dujoy6ah5fxlu