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Characterization of extreme ultraviolet lithography mask defects from extreme ultraviolet far-field scattering patterns
2000
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
We present far-field scattering patterns from programmed phase and opaque defects on extreme ultraviolet lithography mask blanks. Distinct diffraction fringes were observed for both defect types, with fringe spacing dependent on the defect size. Phase defects and opaque defects were found to show clear differences in scattering properties that can be utilized to classify defects.
doi:10.1116/1.1319843
fatcat:4yb4ql56evcwdbfk4zfkiou5w4