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1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)
Cluster ion implantation using decaborane (B 10 H 14 ) has been proposed as a useful technique for shallow junction formation. In order to examine the characteristics and advantages of cluster ion implantation, molecular dynamics simulations of small B cluster and monomer implantation were performed. B 1 , B 4 and B 10 are irradiated on Si (001) substrates with acceleration energy of 230eV/atom so that B 4 and B 10 are accelerated with 0.92keV and 2.3keV, respectively. Those three show the samedoi:10.1109/iit.1998.813919 fatcat:37f6jklpbrc2lh72l6mohaxkya