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Spectral distributions of channeling radiation by 20800 MeV electrons in different planes of a thin 4H polytype silicon carbide crystal is presented. We demonstrated that channeling in 4H SiC with hexagonal structure has some new features not available in other structures. Using Doyle-Turner approximation to the atomic scattering factor and taking in to account thermal vibrations of atoms, the continuum potentials for different planes of 4H polytype SiC single crystal were calculated. In thedoi:10.15161/oar.it/1447924986.12 fatcat:z6tyiaxoxve6hglx2h3vwwyygu