Ar+-Implanted Si-Waveguide Photodiodes for Mid-Infrared Detection

Brian Souhan, Christine Chen, Ming Lu, Aaron Stein, Hassaram Bakhru, Richard Grote, Keren Bergman, William Green, Richard Osgood
2016 Photonics  
Complementary metal-oxide-semiconductor (CMOS)-compatible Ar + -implanted Si-waveguide p-i-n photodetectors operating in the mid-infrared (2.2 to 2.3 µm wavelengths) are demonstrated at room temperature. Responsivities exceeding 21 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 3.1%-3.7%. The dark current is found to vary from a few nanoamps down to less than 11 pA after post-implantation annealing at 350˝C. Linearity is demonstrated over four orders of
more » ... over four orders of magnitude, confirming a single-photon absorption process. The devices demonstrate a higher thermal processing budget than similar Si + -implanted devices and achieve higher responsivity after annealing up to 350˝C.
doi:10.3390/photonics3030046 fatcat:fclmw32jsbhkle5he5qejov7fi