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Complementary metal-oxide-semiconductor (CMOS)-compatible Ar + -implanted Si-waveguide p-i-n photodetectors operating in the mid-infrared (2.2 to 2.3 µm wavelengths) are demonstrated at room temperature. Responsivities exceeding 21 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 3.1%-3.7%. The dark current is found to vary from a few nanoamps down to less than 11 pA after post-implantation annealing at 350˝C. Linearity is demonstrated over four orders ofdoi:10.3390/photonics3030046 fatcat:fclmw32jsbhkle5he5qejov7fi