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Ni 2 MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni 2 MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 ºC). Film thicknesses in the range 10-120 nm were obtained. A study of the structural, magnetic and electrical properties of the films is presented. We find that the deposited films show some degree of crystallinity, with coexisting cubic and tetragonaldoi:10.1051/epjconf/20147503006 fatcat:3gk7s5tlxvbhdancssx7fnkwza