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This paper presents a frequency dependent reliability study of commercially available GaN HEMTs. Both circuit and device-level experiments were performed to better understand the device-level cause of degradation. It was determined through step-frequency analysis performed in a boost converter that there is a frequency-dependent device degradation for positive gate stress. The point of degradation and its primary effect on the converter before the circuit ultimately failed have been analyzeddoi:10.1109/access.2020.3011453 fatcat:ff6afpzwnfhvrpbu7dxxmsehp4