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This paper presents an evaluation of the transient performance of an optoelectronic integrated device. This device is composed of a quantum well infrared photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting diode (LED). It is called as QWIP-HBT-LED optoelectronic integrated device. Evaluation of its transient response is based on the frequency response of the constituent devices. Analytical expressions describing the transient behavior, output derivative as adoi:10.15407/spqeo12.03.260 fatcat:ekbyhlkqlbgqhljh62bfv2juwq