Pt/SnO2 Nanowires/SiC Based Hydrogen Gas Sensor

M. Shafiei, W. Wlodarski, K. Kalantar-zadeh, E. Comini, S. Bianchi, G. Sberveglieri
2007 2007 IEEE Sensors  
Pt/SnO 2 nanowires/SiC based metal-oxidesemiconductor (MOS) devices were fabricated and tested for their gas sensitivity towards hydrogen. Tin oxide (SnO 2 ) nanowires were grown on SiC substrates by the vapour liquid solid growth process. The material properties of the SnO 2 nanowires such as its formation and dimensions were analyzed using scanning electron microscopy (SEM). The currentvoltage (I-V) characteristics at different hydrogen concentrations are presented. The effective change in
more » ... barrier height for 0.06 and 1% hydrogen were found to be 20.78 and 131.59 meV, respectively. A voltage shift of 310 mV at 530°C for 1% hydrogen was measured.
doi:10.1109/icsens.2007.4388362 fatcat:kihgs7pfbncy5giu4oo4zwryui