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2007 IEEE Sensors
Pt/SnO 2 nanowires/SiC based metal-oxidesemiconductor (MOS) devices were fabricated and tested for their gas sensitivity towards hydrogen. Tin oxide (SnO 2 ) nanowires were grown on SiC substrates by the vapour liquid solid growth process. The material properties of the SnO 2 nanowires such as its formation and dimensions were analyzed using scanning electron microscopy (SEM). The currentvoltage (I-V) characteristics at different hydrogen concentrations are presented. The effective change indoi:10.1109/icsens.2007.4388362 fatcat:kihgs7pfbncy5giu4oo4zwryui