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Temperature Effects On The Hydrogen Content And Passivation Of Silicon Surface Coated With Sio2 And Sin Films
2013
IOSR Journal of Engineering
A detailed comparison of the passivation quality and its dependence on the low and high temperature anneals has been carried out for various promising Si surface passivation schemes. The passivation schemes investigated include; conventional furnace oxide (CFO) rapid thermal oxide (RTO), belt line oxide (BLO), plasma deposited oxide (PDO), SiN deposited by plasma enhanced chemical vapour deposition (PECVD). The passivated low resistivity (1Ω-cm) p-type silicon samples were subjected to three
doi:10.9790/3021-031034547
fatcat:h5ve2s47uvb3fh47vy4okebtsq