Compact modeling for the changing transistor

Chenming Hu
2013 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)  
Compact model is not only a tool for IC design but also the unique bridge between IC manufacturing and design. It needs not only a mathematical model of a prototype transistor but also accurate models of many real device effects of the modern transistor. Compact model can address not only circuit performance but also reliability. BSIM and BERT are used as examples.
doi:10.1109/sispad.2013.6650571 fatcat:zj7ychg4ajhv5dpzkor5p7fgsy