Alloy scattering in quantum well wire structures of semiconductor ternaries

G.B. Ibragimov, Institute of Physics, Azerbaijan National Academy of Sciences, 33 Javid av., 370143 Baku, Azerbaijan
2002 Semiconductor Physics, Quantum Electronics & Optoelectronics  
We studied the effect of the alloy-disorder-scattering on the electron transport in a quasi-one-dimensional semiconductor. Performed were analytical calculations of the alloydisorder-limited momentum relaxation time for carrier scattering in a cylindrical quantum wire using modeling wave functions, when the transverse part of the carrier wave function is taken as a Bessel function. It is found that the one-dimensional mobility is significantly greater than two-dimensional one. It is shown that
more » ... . It is shown that the alloy-disorder-scattering-limited mobility increases with the increasing wire radius and increases with the increasing temperature. We compare our results with different scattering mechanisms for one-dimensional systems. Results are also included for the alloy composition dependence of the mobility. Keywords: electron scattering, quantum well, quantum wire. Paper received 10.07.02; accepted for publication 17.12.02. R k J k J nl l nl l nl 1 +
doi:10.15407/spqeo5.04.347 fatcat:4kky5o62nzejxlwkj5vkbunara