A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is
CNFET is generally considered to be one of the most appealing next generation transistors because of its high current carrying capacity and ballistic transport property. This paper investigates the performance analysis of Dual-X Current Conveyor with the CNFET technology, by varying the CNT diameter at 32nm technology node. Current Bandwidth, Input and Output Port resistances of the device along with the average power dissipated are chosen as the parameters of reference for carrying out thedoi:10.5120/8972-3051 fatcat:f4mn46ulnzfzbag4inn4wezmpm