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RECOMBINATION MECHANISM AT DISLOCATIONS IN GaAs EBIC CONTRAST STUDY
Journal de Physique IV : Proceedings
Dislocations located in the space charge region of a Schottky diode are recombination centers for electron hole pairs. We assume that minority carriers created within a region where the dislocation electrical field is larger than the Schottky field are recombined at the dislocation line. Therefore, a capture cylinder radius can be defined by the criterium Quantitative values of the EBIC contrast have been calculated on this assumption. We only deal with electrical fields associated with thedoi:10.1051/jp4:1991606 fatcat:rdlr6wt76nc7xpaig4vyzwntjq