Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

Ji-Hyun Hur, Sanghun Jeon
2016 JSTS Journal of Semiconductor Technology and Science  
We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using sp3d5s* is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional Schrödinger-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V
more » ... ltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic (I ON > 100 μA/μm) that broken-gap TFETs normally have. Index Terms-Tunneling field effect transistor, GaSb, InAs, nanowire, quantum transport Source (p-type) Drain (n-type) Channel (n-type)
doi:10.5573/jsts.2016.16.5.630 fatcat:bwqyje3adbewrcfpzknajnj5ry