Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors [chapter]

M. Pourfath, E. Ungersboeck, A. Gehring, B. H. Cheong, H. Kosina, S. Selberherr
2004 Simulation of Semiconductor Processes and Devices 2004  
Two-dimensional (2D) and three-dimensional (3D) electrostatic analyses of Schottky barrier carbon nanotube field effect transistors (CNTFETs) are carried out. Comparisons between 2D and 3D simulation results for symmetric and asymmetric structures indicate that 2D simulations do not describe the behavior of the device accurately, suggesting that to understand and improve the behavior of CNTFETs 3D electrostatic analysis is required. Modeling Assuming ballistic transport, we calculate the drain current using the Landauer-Büttiker formula [4]
doi:10.1007/978-3-7091-0624-2_35 fatcat:c262mwbvmbbmhczhnkouw5egn4