Impact of proton implantation parameters on the photoconductivity of photorefractive multiple quantum wells

Blazej Jablonski, Agnieszka Branecka, Eliza Miskiewicz, Andrzej Ziolkowski, Ewa Weinert-Raczka
2015 Photonics Letters of Poland  
Semi-insulating GaAs/AlGaAs multiple quantum wells are photorefractive materials with high sensitivity and short response time. Semi-insulation of these structures is commonly obtained by proton implantation. We present the measurements of photoconductivity in the samples with different proton doses. The results were compared to the theoretically predicted relationship between photoconductivity and the donor to acceptor concentration ratio. This allows to estimate the impact of proton dose on
more » ... of proton dose on deep donor concentration.
doi:10.4302/plp.2015.4.12 fatcat:gbmnep3d2fghdbwfx4ftsed63a