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We report the first gallium nitride (GaN)-based broad-band power amplifier. The circuit was fabricated on an AlN substrate using AlGaN/GaN power high-electron mobility transistors (HEMT's), grown on sapphire substrates, which were flip-chip bonded for thermal management. The amplifier employed a modified traveling-wave power amplifier (TWPA) topology that eliminated the backward wave of conventional TWPA's. Using four HEMT's each with 0.75-m gate length and 0.75-mm gate periphery, adoi:10.1109/75.774146 fatcat:icjoke7oxfhepgwabnxlkmeqdq