Etch Characteristics of Nickel Oxide Thin Films Using Inductively Coupled Plasma Reactive Ion Etching

Han Na Cho, Su Ryun Min, Hyung Jin Bae, Jung Hyun Lee, Chee Won Chung
2008 Electrochemical and solid-state letters  
Dry etching of NiO thin films masked with a photoresist was performed in a Cl 2 /Ar gas mix. The etch rate of NiO films decreased as Cl 2 concentration increased. The surface morphology etched at high Cl 2 concentration was smoother than that etched at low Cl 2 concentration. The etch profiles were improved with increasing coil radio-frequency ͑rf͒ power and dc-bias voltage. An X-ray photoelectron spectroscopy analysis confirms the formation of NiCl 2 compound due to a chemical reaction with
more » ... orine radicals. These results indicate that the etching of NiO films is governed by a physical sputtering etching mechanism with a surface chemical reaction.
doi:10.1149/1.2811701 fatcat:q2qfzmccrbcvjidzvh7jh33dhq