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Investigation on Robustness of CMOS Devices Against Cable Discharge Event (CDE) Under Different Layout Parameters in a Deep-Submicrometer CMOS Technology
2008
IEEE transactions on electromagnetic compatibility (Print)
Cable discharge events (CDEs) have been found to be the major root cause of inducing hardware damage on Ethernet ICs of communication interfaces in real applications. Still, there is no device-level evaluation method to investigate the robustness of complementary metal-oxide-semiconductor (CMOS) devices against a CDE for a layout optimization in silicon chips. The transmission-line pulsing (TLP) system was the most important method used to observe the electrical characteristics of semiconductor
doi:10.1109/temc.2008.2004582
fatcat:6dtlg3rvofgpvn2lmjjw5jmxea