Patterning of silicon by indentation and chemical etching

R. Rao, J. E. Bradby, J. S. Williams
2007 Applied Physics Letters  
An array of features on Si ͑100͒ is fabricated by a new maskless pattering process involving a combination of indentation and anisotropic wet chemical etching. Indentation is carried out in order to induce transformation to the high-pressure phases, Si III and Si XII, before etching in a KOH solution. The pressure-induced phases are found to be highly resistant to etching in the KOH solution, with an etch rate more than an order of magnitude slower than that of Si ͑100͒. The possibility of
more » ... iting this mechanism for a maskless nanoscale patterning process in Si using indentation is discussed.
doi:10.1063/1.2779111 fatcat:yxmhbh656je2jb43gyqdjvba5q