Ambipolar light-emitting field-effect transistors are fabricated with two different metals for the top-contact source and drain electrodes; a low-work-function metal defining the channel for the source electrode and a high-work-function metal defining the channel for the drain electrode. A thin film of polypropylene-co-1-butene on SiN x is used as the gate dielectric on an n ++ -Si wafer, which functioned as the substrate and the gate electrode. Transport data show ambipolar behavior.

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... ion of electrons and holes results in a narrow zone of light emission within the channel. The location of the emission zone is controlled by the gate bias.