Controlled two-step solid-phase crystallization for high-performance polysilicon TFT's

V. Subramanian, P. Dankoski, L. Degertekin, B.T. Khuri-Yakub, K.C. Saraswat
1997 IEEE Electron Device Letters  
Solid-phase crystallization for polysilicon thin-film transistors (TFT's) is generally limited by a tradeoff between throughput and device performance. Larger grains require lower crystallization temperatures, and hence, longer crystallization times. In this letter, a novel crystallization technique is presented which increases both throughput and device performance, using a two-step process, controlled using an in situ acoustic temperature/crystallinity sensor. A high-temperature rapid thermal
more » ... ature rapid thermal annealing (RTA) nucleation step is followed by a low-temperature grain growth step to grow large-grain polysilicon. TFT's have been fabricated with a substantial improvement in throughput and device performance. This promises a high-throughput, highperformance, spatially uniform TFT process.
doi:10.1109/55.605445 fatcat:dptyxkzwozejff7v6gbkhckt7a