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The ultimate target for silicon photonics is to merge together all electronic and photonic functions on the same CMOS platform. This requires efficient light emitters and absorbers directly integrated on silicon chips, the lack of which presently forms one of the major bottlenecks for further progress. In this work, a possible solution is presented where diffusion-driven charge transport (DDCT), lateral doping of silicon, and III-V nanowire growth are combined to create fully integrateddoi:10.1103/physrevapplied.13.064035 fatcat:mho6wao5mjekjhyxhs3yejrl2a