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Electron–hole asymmetry and energy gaps in bilayer graphene
Semiconductor Science and Technology
We review the tight-binding model of bilayer graphene which describes four low-energy electronic bands near the corner of the first Brillouin zone. The model takes into account terms arising from nearest and next-nearest neighbour hopping within each layer, non-orthogonality of atomic orbitals, various inter-layer couplings, as well as three independent parameters that describe differences between the on-site energies of the four atoms in the unit cell. We generalize the derivation of thedoi:10.1088/0268-1242/25/3/033001 fatcat:xdmtu5bzmne3lfv5rjwdac7mp4